Superconductivity in Indium Diffused GaAs

Proximity induced superconductivity in indium gallium arsenide quantum wells

Centre for Advanced Photonics and Electronics (CAPE), Electrical Engineering Division, University of Cambridge, Cambridge CB3 0FA, UK Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK Department of Electronic and Electrical Engineering, University of Shef...

In-situ Determination of Indium Segregation in InGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

The surface segregation of indium atoms during the growth of InGaAs/GaAs heterostructures has been investigated in situ by re ection high-energy electron di raction (RHEED). We pointed out that the strong damping of the RHEED oscillations during the deposition of InGaAs on GaAs was related to the segregation strength of indium atoms in the InGaAs layer. A simple model shows that the decay const...

Electron effective mass and phonon modes in GaAs incorporating boron and indium

Electron microscopic and optical investigations of the indium distribution in GaAs capped InxGa12xAs islands

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-de...